ARPA-E awards $175M to 68 novel clean energy OPEN 2021 projects
Green Car Congress
FEBRUARY 15, 2022
8" GaN-on-Si Super Junction Devices for Next Generation Power Electronics - $4,521,601. The MIT will develop a new generation of power electronics based on vertical gallium nitride (GaN) superjunction diodes and transistors that can vastly exceed the performance of today’s GaN power devices. Stanford University.
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