ARPA-E awards $35M to 12 new projects to support medium-voltage devices for grid, industry and transportation
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FEBRUARY 8, 2019
The concept builds on Sandia’s knowledge of optically triggered GaN devices, as well as the team’s experience in circuit design for medium-voltage (MV) applications. The Ohio State University will develop gallium nitride (GaN) semiconductor materials suitable for high voltage (15-20 kV) power control and conversion.
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